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Fabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films

Title
Fabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films
Authors
Lee, SKKim, HGChung, WJKang, BKKim, O
POSTECH Authors
Kang, BKKim, O
Date Issued
Jan-1996
Publisher
JAPAN J APPLIED PHYSICS
Keywords
polycrystalline silicon germanium; TFT; ECR plasma hydrogenation; RTCVD; TEMPERATURE
URI
http://oasis.postech.ac.kr/handle/2014.oak/33821
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 35, no. 2B, page. 919 - 922, 1996-01
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 KANG, BONG KOO
Dept of Electrical Enginrg
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