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Cited 11 time in webofscience Cited 9 time in scopus
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Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Title
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
Authors
Yoo, JWoo, JSong, JHwang, H
POSTECH Authors
Hwang, H
Date Issued
Dec-2015
Publisher
American Institute of Physics Inc.
Keywords
AMORPHOUS-SILICON; DIFFUSION; MEMORIES
URI
http://oasis.postech.ac.kr/handle/2014.oak/29885
DOI
10.1063/1.4938548
ISSN
2158-3226
Article Type
Article
Citation
AIP ADVANCES, vol. 5, no. 12, page. 127221, 2015-12
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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