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Analysis of depth profile for impurity concentration in Si wafer by synchrotron radiation excited total reflection X-ray fluorescence spectroscopy

Title
Analysis of depth profile for impurity concentration in Si wafer by synchrotron radiation excited total reflection X-ray fluorescence spectroscopy
Authors
Huh, BKKim, JSShin, NSKoo, YMChung, HY
POSTECH Authors
Koo, YM
Date Issued
Jan-2003
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
synchrotron radiation-total reflection X-ray fluorescence (SR-TXRF); depth profile; Si wafer; SURFACES; NI
URI
http://oasis.postech.ac.kr/handle/2014.oak/29700
DOI
10.1016/S0584-8547(0
ISSN
0584-8547
Article Type
Article
Citation
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, vol. 58, no. 8, page. 1445 - 1452, 2003-01
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 KOO, YANG MO
Graduate Institute of Ferrous Technology
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