Open Access System for Information Sharing

Login Library

 

PROCEEDINGS PAPER
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

Title
ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
Authors
Lim, SJKwon, SJKim, H권순주
Date Issued
Jan-2008
Publisher
ELSEVIER SCIENCE SA
Abstract
Recently, the application of ZnO thin films as an active channel layer of transparent thin film transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by atomic layer deposition (ALD) from diethyl Zn (DEZ) as a metal precursor and water as a reactant at growth temperatures between 100 and 250 degrees C. At typical growth conditions, pure ZnO thin films were obtained without any detectable carbon contamination. For comparison of key film properties including microstructure and chemical and electrical properties, ZnO films were also prepared by rf sputtering at room temperature. The microstructure analyses by X-ray diffraction have shown that both of the ALD and sputtered ZnO thin films have (002) preferred orientation. At low growth temperature T-s <= 125 degrees C, ALD ZnO films have high resistivity (>10 Omega cm) with small mobility (<3 cm(2)/Vs), while the ones prepared at higher temperature have lower resistivity (<0.02 Omega cm) with higher mobility (>15 cm(2)/V s). Meanwhile, sputtered ZnO films have much higher resistivity than ALD ZnO at most of the growth conditions studied. Based upon the experimental results, the electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed focusing on the comparisons between ALD and sputtering. (C) 2007 Elsevier B.V. All rights reserved.
Keywords
atomic layer deposition; rf sputtering; ZnO; transparent TFT; RAY PHOTOELECTRON-SPECTROSCOPY; ZINC-OXIDE; ELECTRICAL-PROPERTIES; ROOM-TEMPERATURE; TRANSPARENT; ORIENTATION; EPITAXY; GROWTH; METAL
URI
http://oasis.postech.ac.kr/handle/2014.oak/29352
DOI
10.1016/J.TSF.2007.0
ISSN
0040-6090
Article Type
PROCEEDINGS PAPER
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse