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Ohmic contacts for high power LEDs

Title
Ohmic contacts for high power LEDs
Authors
Jang, HWKim, JKKim, SYYu, HKLee, JL김종규
Date Issued
Sep-2004
Publisher
WILEY-V C H VERLAG GMBH
Abstract
We report novel metallization schemes of transparent p-ohmic contacts for conventional LEDs and reflective p-ohmic contacts for flip-chip and vertical-structure LEDs. Thermally stable and low-resistivity Ru/Ni/ITO ohmic contacts on p-type GaN resulted in the low contact resistivity of 2 x 10(-4) Omega cm(2) and the high transmittance of 92% at 470 nm wavelength. The light output power of the LED with the Ru/Ni/ITO p-contact was increased by 50% compared to the LED of a Ni/Au transparent p-contact. Using a newly developed Ni/Ag/Ru/Ni/Au reflective p-ohmic contact, the low contact resistivity of 5 x 10(-5) Omega cm(2) could be achieved. The light reflectance of the contact was as high as 90% at 470 mn wavelength.
Keywords
P-TYPE GAN; LIGHT-EMITTING-DIODES; LOW-RESISTANCE; NI/AU
URI
http://oasis.postech.ac.kr/handle/2014.oak/28159
DOI
10.1002/PSSA.2004051
ISSN
0031-8965
Article Type
PROCEEDINGS PAPER
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