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Metal/GaN reaction chemistry and their electrical properties

Title
Metal/GaN reaction chemistry and their electrical properties
Authors
Kim, CCSeol, SKKim, JKLee, JLHwu, YRuterana, PMagaritondo, GJe, JH김종규
Date Issued
Oct-2004
Publisher
WILEY-V C H VERLAG GMBH
Abstract
We investigated the reaction chemistry of metal contacts to GaN during annealing using X-ray photoelectron spectroscopy (XPS). GaN decomposition was estimated, using XPS, to occur in N-2 annealed Ni-alloy contacts at 550 degreesC. The reaction was greatly accelerated by the catalytic effect of Au and Pt. The decomposition was correlated with the rapid degradation of electrical properties during annealing. The results suggest that high-temperature applications may be critically limited by the degradation of metal contacts especially due to activated Ni reactivity in Ni-alloyed contacts. Meanwhile, the thermal stability of Ni/Au contact greatly improves by suppressing the activated Ni reactivity, which is able to be obtained by forming preferential Ni-O bonding through annealing in air.
Keywords
FIELD-EFFECT TRANSISTORS; P-TYPE GAN; NI/AU CONTACT; DIODES
URI
http://oasis.postech.ac.kr/handle/2014.oak/28158
DOI
10.1002/PSSB.2004049
ISSN
0370-1972
Article Type
PROCEEDINGS PAPER
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