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Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion Barrier

Title
Low Resistance and Themarlly Stable Ohmic Contact on p-type GaN Using a RuO2 Diffusion Barrier
Authors
Son, JHYu, HKSong, YHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Dec-2008
Publisher
KOREAN INST METALS MATERIALS
Keywords
p-GaN; ohmic contact; LEDs; diffusion barrier; thermal stability; LIGHT-EMITTING-DIODES; OXIDIZED NI/AU
URI
http://oasis.postech.ac.kr/handle/2014.oak/27888
ISSN
1738-8090
Article Type
Article
Citation
ELECTRONIC MATERIALS LETTERS, vol. 4, no. 4, page. 157 - 160, 2008-12
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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