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High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

Title
High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
Authors
Black, CTGuarini, KWZhang, YKim, HJBenedict, JSikorski, EBabich, IVMilkove, KR김형준
Date Issued
Sep-2004
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Abstract
We combine nanometer-scale polymer self assembly With advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The-self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.
Keywords
decoupling capacitor; high surface area; metaloxide-semiconductor; self assembly; INTEGRATION; TEMPLATES; SILICON; FILMS
URI
http://oasis.postech.ac.kr/handle/2014.oak/27884
DOI
10.1109/LED.2004.834
ISSN
0741-3106
Article Type
ARTICLE
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