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In-situ doping during ZnO atomic layer deposition

Title
In-situ doping during ZnO atomic layer deposition
Authors
Lim, S. J.Lee, Sung KyunJo, MinhoLee, Chang-SooKwon, SoonjuKim, Hyungjun권순주
Date Issued
Jul-2008
Publisher
KOREAN PHYSICAL SOC
Abstract
We have deposited transparent conducting Al-doped ZnO films on glass and Si substrates by atomic layer deposition (ALD) at a relatively low substrate temperature of 200 degrees C and evaluated the electrical and the optical properties of these films. For Al-doped ZnO film growth by using the ALD process, diethylzinc (DEZ) and trimethylaluminum (TMA) were used as metal precursors and water as a reactant. The process conditions were optimized by varying the deposition temperature, The TMA:DEZ cycle ratio and TMA exposure time and an Al-doped ZnO film with a resistivity of 1.09 x 10(-3) Omega.cm, a carrier concentration of 1.16 x 10(21) cm(-3) and a carrier mobility of 5.0 cm(2)/V.S was attained. In addition, the Al-doped ZnO film was focused to have a relevant transmittance as a transparent conducting electrode. The transmittances of the film in the visible region were in excess of 80% (450 nm <= lambda <= 1100 nm) and 65% (380 nm <= lambda <= 450 nm).
Keywords
transparent conducting oxides; atomic layer deposition; Al-doped ZnO films; TRANSPARENT CONDUCTING OXIDES; PULSED-LASER DEPOSITION; THIN-FILMS; AL FILMS
URI
http://oasis.postech.ac.kr/handle/2014.oak/26483
ISSN
0374-4884
Article Type
PROCEEDINGS PAPER
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