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Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy

Title
Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy
Authors
Ryu, SPCho, NKLim, JYChoi, WJSong, JDLee, JILee, YTPark, CG
POSTECH Authors
Park, CG
Date Issued
Mar-2010
Publisher
ELSEVIER SCIENCE BV
Keywords
InAs quantum dot; Molecular beam epitaxy; Strain reducing layer; INFRARED PHOTODETECTOR; OPTICAL-PROPERTIES; MU-M; GAAS; TEMPERATURE; TRANSITION; SEPARATION; LASERS; STATES
URI
http://oasis.postech.ac.kr/handle/2014.oak/26216
DOI
10.1016/J.PHYSE.2009.12.039
ISSN
1386-9477
Article Type
Article
Citation
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol. 42, no. 5, page. 1536 - 1539, 2010-03
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 PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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