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Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor depositionCharacterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition

Title
Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor depositionCharacterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition
Authors
Choi, CHKim, SHJung, MH
POSTECH Authors
Kim, SH
Date Issued
Dec-2009
Publisher
ELSEVIER SCIENCE BV
Keywords
Metal-organic chemical vapor deposition; Mn-doped GaN; Diluted magnetic semiconductor; Spintronics; MOLECULAR-BEAM EPITAXY; DILUTED MAGNETIC SEMICONDUCTORS; P-TYPE GAN; OPTICAL-PROPERTIES; MN CONCENTRATION; MBE GROWTH; TEMPERATURE; (GA,MN)N; SPINTRONICS; PROPERTY
URI
http://oasis.postech.ac.kr/handle/2014.oak/26105
ISSN
0304-8853
Article Type
Article
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 321, no. 23, page. 3833 - 3838, 2009-12
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 KIM, SEON HYO
Graduate Institute of Ferrous Technology
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