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Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors

Title
Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
Authors
Kim, CJLee, HSCho, YJKang, KJo, MH
POSTECH Authors
Jo, MH
Date Issued
Apr-2010
Publisher
AMER CHEMICAL SOC
Keywords
Ge semiconductor; nanowire; photoconductor; internal gain; FIELD-EFFECT TRANSISTORS; SURFACE-STATES; GERMANIUM; TRANSPORT; ELECTRON; SILICON; BAND
URI
http://oasis.postech.ac.kr/handle/2014.oak/25981
ISSN
1530-6984
Article Type
Article
Citation
NANO LETTERS, vol. 10, no. 6, page. 2043 - 2048, 2010-04
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 JO, MOON HO
Dept of Materials Science & Enginrg
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