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Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
- Title
- Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
- POSTECH Authors
- Jo, MH
- Date Issued
- Apr-2010
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Ge semiconductor; nanowire; photoconductor; internal gain; FIELD-EFFECT TRANSISTORS; SURFACE-STATES; GERMANIUM; TRANSPORT; ELECTRON; SILICON; BAND
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- NANO LETTERS, vol. 10, no. 6, page. 2043 - 2048, 2010-04
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Related Researcher
- JO, MOON HO
- Dept of Materials Science & Enginrg