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The effect of plasma anodization on AlGaN/GaN HEMT

Title
The effect of plasma anodization on AlGaN/GaN HEMT
Authors
Moon, SHAhn, HJLee, JSShim, KHYang, JW
POSTECH Authors
Lee, JS
Date Issued
Dec-2007
Publisher
KOREAN PHYSICAL SOC
Keywords
gate leakage current; anodization; HEMT; ELECTRON-MOBILITY TRANSISTORS; OXIDATION; GAN; FILMS
URI
http://oasis.postech.ac.kr/handle/2014.oak/25894
ISSN
0374-4884
Article Type
Article
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 51, page. S258 - S261, 2007-12
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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