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Cited 6 time in webofscience Cited 8 time in scopus
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Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses

Title
Failure Analysis of Si Nanowire Field-Effect Transistors Subject to Electrostatic Discharge Stresses
Authors
Liu, WLiou, JJJiang, YSingh, NLo, GQChung, JJeong, YH
POSTECH Authors
Jeong, YH
Date Issued
Sep-2010
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Degradation; electrostatic discharge (ESD); failure analysis; gate oxide breakdown; nanowire field-effect transistor (NW FET); GATE; PERFORMANCE; PROTECTION; DESIGN
URI
http://oasis.postech.ac.kr/handle/2014.oak/25380
DOI
10.1109/LED.2010.2052911
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 9, page. 915 - 917, 2010-09
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 JEONG, YOON HA
Dept of Electrical Enginrg
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