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The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

Title
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
Authors
Park, MSLee, KTKang, CYChoi, GBSagong, HCSohn, CWMin, BGOh, JMajhi, PTseng, HHLee, JCLee, JSJammy, RJeong, YH
POSTECH Authors
Lee, JSJeong, YH
Date Issued
Oct-2010
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.
Keywords
Figure of merit (FOM); Ge out-diffusion; radio-frequency (RF) measurement; Si cap layer; SiGe pMOSFET; PERFORMANCE; QUALITY
URI
http://oasis.postech.ac.kr/handle/2014.oak/25379
DOI
10.1109/LED.2010.2061212
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 31, no. 10, page. 1104 - 1106, 2010-10
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 JEONG, YOON HA
Dept of Electrical Enginrg
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