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Cited 23 time in webofscience Cited 23 time in scopus
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Growth Mechanism of MgO Film on Si (100). Domain Matching Epitaxy, Strain Relaxation, Preferred Orientation Formation

Title
Growth Mechanism of MgO Film on Si (100). Domain Matching Epitaxy, Strain Relaxation, Preferred Orientation Formation
Authors
Yu, HKLee, JL
POSTECH Authors
Lee, JL
Date Issued
Dec-2010
Publisher
AMER CHEMICAL SOC
Keywords
PULSED-LASER DEPOSITION; BUFFER LAYER; THIN-FILMS; TIN FILMS; SI(001); SURFACES; MORPHOLOGY; STABILITY; CRYSTALS
URI
http://oasis.postech.ac.kr/handle/2014.oak/25199
DOI
10.1021/CG101001E
ISSN
1528-7483
Article Type
Article
Citation
CRYSTAL GROWTH & DESIGN, vol. 10, no. 12, page. 5200 - 5204, 2010-12
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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