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Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistor

Title
Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistor
Authors
Kim, KHJeon, CMOh, SHLee, JLPark, CGLee, JHLee, KSKoo, YM
POSTECH Authors
Lee, JLPark, CGKoo, YM
Date Issued
Jan-2005
Publisher
A V S AMER INST PHYSICS
Abstract
An AlGaN/GaN wide band-gap semiconductor. with the Ta/Ti/Al/Ni/Au ohmic contact (7.5 x 10(-7) Omega cm(2)) was demonstrated by 700 degreesC annealing for 1 min. High-resolution electron microscopy and synchrotron-radiation x-ray diffraction showed that nitride phases were formed at the interface between the metal and the AlGaN layer. The thick formation of TaN/TiN interfacial layers appears to be responsible for the good ohmic contact behavior in Ta/Ti/Al/Ni/Au metal scheme. The surface morphology of Ta-based contacts is superior to that of the Ti/Al/Ni/Au metal scheme, The fabricated heterostructure field-effect transistor exhibited the saturation drain current density of 605 mA/mm and transconductance of 246 mS/mm. (C) 2005 American Vacuum Society.
URI
http://oasis.postech.ac.kr/handle/2014.oak/24755
DOI
10.1116/1.1856479
ISSN
1071-1023
Article Type
Article
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 1, page. 322 - 326, 2005-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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