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Rhodium-oxide-coated indium tin oxide for enhancement of hole injection in organic light emitting diodes

Title
Rhodium-oxide-coated indium tin oxide for enhancement of hole injection in organic light emitting diodes
Authors
Kim, SYBaik, JMYu, HKKim, KYTak, YHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2005
Publisher
AMER INST PHYSICS
Abstract
The authors report the enhancement of hole injection using an RhOx layer between indium tin oxide anodes and 4,4(')-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in organic light-emitting diodes (OLEDs). The operation voltage of OLEDs at 700 cd/m(2) decreased from 13 to 10 V as the Rh layer changed to RhOx by surface treatment using O-2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased by 0.2 eV as the Rh layer transformed into RhOx. Thus, the hole injection energy barrier was lowered, reducing the turn-on voltage and increasing the quantum efficiency of OLEDs. (C) 2005 American Institute of Physics.
URI
http://oasis.postech.ac.kr/handle/2014.oak/24440
DOI
10.1063/1.2012534
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 87, no. 7, 2005-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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