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Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties

Title
Growth behaviour of well-aligned ZnO nanowires on a Si substrate at low temperature and their optical properties
Authors
Jeong, JSLee, JYCho, JHLee, CJAn, SJYi, GCGronsky, R
POSTECH Authors
Yi, GC
Date Issued
Jan-2005
Publisher
IOP PUBLISHING LTD
Abstract
Well-aligned ZnO nanowires were successfully synthesized on a silicon substrate at the low temperature of 550 degrees C by catalyst-free vapour phase deposition. The ZnO nanowires had diameters in the range of 70-100 nm and lengths over several tens of micrometres. The synthesized ZnO nanowires, which had a single-crystalline wurtzite structure, showed a uniform morphology and faceted planes at the tips of the nanowires. The photoluminescence of the ZnO nanowires showed a strong UV band at 3.28 eV and a broad green band at 2.29 and at 2.53 eV at room temperature. A detailed discussion regarding the growth behaviour and the growth mechanism of the ZnO nanowires on the silicon substrate is presented in this work.
Keywords
PHYSICAL VAPOR-DEPOSITION; ZINC-OXIDE NANOWIRES; CATALYST-FREE GROWTH; PHOTOLUMINESCENCE; MECHANISM; MICROCRYSTALS; NANOBELTS; CRYSTALS; NANORODS
URI
http://oasis.postech.ac.kr/handle/2014.oak/24335
DOI
10.1088/0957-4484/16
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 16, no. 10, page. 2455 - 2461, 2005-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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