Open Access System for Information Sharing

Login Library

 

Article
Cited 19 time in webofscience Cited 0 time in scopus
Metadata Downloads

Heteroepitaxial growth of high-quality GaN thin films on Si substrates coated with self-assembled sub-micrometer-sized silica balls

Title
Heteroepitaxial growth of high-quality GaN thin films on Si substrates coated with self-assembled sub-micrometer-sized silica balls
Authors
An, SJHong, YJYi, GCKim, YJLee, DK
POSTECH Authors
Yi, GC
Date Issued
Jan-2006
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Monodisperse sub-micrometer-sized silica balls are employed as an intermediate layer for the heteroepitaxial growth of GaN thin films on Si(111) substrates (see figure). The structural and optical characteristics of the films are shown to be improved compared to conventional techniques, as the maskless overgrowth technique employed simplifies the growth process. This method could be exploited to grow other heteroepitaxial films on substrates with large lattice constants and thermal expansion coefficient mismatches.
Keywords
EPITAXIAL LATERAL OVERGROWTH; OPTICAL-PROPERTIES; SI(111); HETEROSTRUCTURES; MASK
URI
http://oasis.postech.ac.kr/handle/2014.oak/23708
DOI
10.1002/ADMA.2006016
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 18, no. 21, page. 2833, 2006-01
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

 YI, GYU CHUL
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse