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Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns

Title
Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns
Authors
Hong, YJAn, SJJung, HSLee, CHYi, GC
POSTECH Authors
Yi, GC
Date Issued
Jan-2007
Publisher
WILEY-V C H VERLAG GMBH
Abstract
ZnO nanorod arrays are selectively grown on 31 Substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Although we used facet-controlled GaN micropatterns for selective MOPVE growth, other micropatterns can be employed if the difference in surface energies between a top surface and the sidewalls of a micropattern is large enough to affect heteroepitaxial selective growth of the nanorods. This growth may be expanded to create many other position-controlled semiconductor nanorods. [GRAPHICS]
Keywords
NANOWIRE ARRAYS; BOUND-EXCITON; BEAM EPITAXY; THIN-FILMS; AB-INITIO; CRYSTAL; HETEROSTRUCTURES; OPTOELECTRONICS; LITHOGRAPHY
URI
http://oasis.postech.ac.kr/handle/2014.oak/22989
DOI
10.1002/ADMA.2007012
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 19, no. 24, page. 4416 - +, 2007-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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