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Morphology transformation of patterned, uniform and faceted GaN microcrystals

Title
Morphology transformation of patterned, uniform and faceted GaN microcrystals
Authors
Kim, TWHong, YJYi, GCKwon, JHKim, MHan, HNKim, DHOh, KHKong, KJKwon, YK
POSTECH Authors
Yi, GC
Date Issued
Jan-2008
Publisher
IOP PUBLISHING LTD
Abstract
We report on the growth and characterization of patterned and uniformly distributed GaN microcrystals with well-defined facets and epitaxy. The microcrystals were grown on a mask patterned by lithography. The GaN microcrystals were formed by selective-area epitaxy using metal-organic chemical-vapour deposition. The GaN microcrystals have similar sizes and shapes. Each microcrystal consists of an upper and a lower part, which are rotated by 30 degrees. Transmission electron microscopy shows that there is a rather clear interface between the two parts of the crystal, suggesting a sudden change in the growth direction. We performed ab initio calculations for the surface energies of hexagonal GaN, and the growth morphology is explained based on surface energy considerations.
Keywords
TOTAL-ENERGY CALCULATIONS; GROWTH; PSEUDOPOTENTIALS; NANOCRYSTALS; NANOBELTS; NANOWIRES
URI
http://oasis.postech.ac.kr/handle/2014.oak/22922
DOI
10.1088/0022-3727/41
ISSN
0022-3727
Article Type
Article
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 41, no. 1, 2008-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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