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Self-trapping nature of Tl nanoclusters on the Si(111)-7 x 7 surface

Title
Self-trapping nature of Tl nanoclusters on the Si(111)-7 x 7 surface
Authors
Hwang, CGKim, NDLee, GShin, SYKim, JSChung, JW
POSTECH Authors
Chung, JW
Date Issued
Jan-2008
Publisher
IOP PUBLISHING LTD
Abstract
We have studied properties of thallium (Tl) nanoclusters formed on the Si (111)-7 x 7 surface at room temperature (RT) by utilizing photoemission spectroscopy (PES) and high-resolution electron-energy-loss spectroscopy (HREELS) combined with first principles calculations. Our PES data reveal that the surface states stemming from the Si substrate remain quite inert with Tl adsorption producing no Tl-induced state until saturation at Tl coverage theta = 0.21 monolayers. Such a behavior, in sharp contrast with the extremely reactive surface states upon the formation of Na or Li nanoclusters, together with the presence of a unique Tl-induced loss peak in HREELS spectra suggests no strong Si-Tl bonding, and is well understood in terms of gradual filling of Si dangling bonds with increasing theta. Our calculation further indicates the presence of several metastable atomic structures of Tl nanoclusters at RT rapidly transforming from one to another faster than 10(10) flippings per second. We thus conclude that the highly mobile Tl atoms form self-trapped nanoclusters within the attractive basins of the Si substrate at RT with several metastable phases. The mobile and multi-phased nature of Tl nanoclusters not only accounts for all the existing experimental observations available at present, but also provides an example of self-trapping of atoms in a nanometre-scale region.
Keywords
X 7) SURFACE; ELECTRONIC-STRUCTURE; QUANTUM DOTS; DYNAMICS; LATTICE; METALS; ENERGY; AL
URI
http://oasis.postech.ac.kr/handle/2014.oak/22767
DOI
10.1088/1367-2630/10
ISSN
1367-2630
Article Type
Article
Citation
NEW JOURNAL OF PHYSICS, vol. 10, 2008-01
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 CHUNG, JIN WOOK
Dept of Physics
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