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2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY

Title
2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY
Authors
KIM, HLEE, HGLEE, JLMUN, JKPARK, HM
POSTECH Authors
LEE, JL
Date Issued
Jan-1994
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
URI
http://oasis.postech.ac.kr/handle/2014.oak/21921
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 15, page. 324 - 326, 1994-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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