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Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD

Title
Quantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD
Authors
Lee, JSAhn, KHJeong, YH이진수
Date Issued
Jan-1996
Publisher
IOP PUBLISHING LTD
Abstract
Quantum Hall effect devices based on delta-doped Al0.25Ga0.75In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm(2)/V . s with a sheet carrier density of 2.0 x 10(12)cm(-2) has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field (B-min) of 3 mu T at 1 Hz is achieved due to the high electron mobility.
Keywords
SUPERLATTICE STRUCTURES
URI
http://oasis.postech.ac.kr/handle/2014.oak/21660
ISSN
0951-3248
Article Type
PROCEEDINGS PAPER
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