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dc.contributor.authorShin, JHko
dc.contributor.authorLee, JWko
dc.contributor.authorSuh, YSko
dc.contributor.authorKim, BMko
dc.date.available2016-03-31T14:23:33Z-
dc.date.created2009-03-18-
dc.date.issued1996-01-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.17, no.2, pp.65 - 68-
dc.identifier.issn0741-3106-
dc.identifier.other1996-OAK-0000009333-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/21639-
dc.description.abstractTo reduce the low-frequency noise, HBT's with a large emitter size of 120 x 120 mu m(2) are fabricated on abrupt emitter-base junction materials without undoped spacer. The HBT's exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBT's, From the very low noise HBT's, the existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with different base terminations. It is found that, at a high emitter-base forward bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. Device design rules for low noise small-feature size HBT, including resistance fluctuation, are discussed.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGI-
dc.subjectTRANSPORT-
dc.subjectHBTS-
dc.title1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/55.484125-
dc.author.googleShin, JH-
dc.author.googleLee, JW-
dc.author.googleSuh, YS-
dc.author.googleKim, BM-
dc.relation.volume17-
dc.relation.issue2-
dc.relation.startpage65-
dc.relation.lastpage68-
dc.contributor.id10106173-
dc.publisher.locationUS-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorKim, BM-
dc.contributor.nonIdAuthorShin, JH-
dc.contributor.nonIdAuthorLee, JW-
dc.contributor.nonIdAuthorSuh, YS-
dc.identifier.wosidA1996TU25200010-
dc.date.tcdate2019-01-01-
dc.citation.endPage68-
dc.citation.number2-
dc.citation.startPage65-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume17-
dc.identifier.scopusid2-S2.0-0030082405-
dc.description.journalClass1-
dc.description.wostc8-

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