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A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

Title
A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications
Authors
Lee, JLMun, JKKim, HLee, JJPark, HM
POSTECH Authors
Lee, JL
Date Issued
Jan-1996
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
URI
http://oasis.postech.ac.kr/handle/2014.oak/21613
ISSN
0018-9383
Article Type
Article
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 43, no. 4, page. 519 - 526, 1996-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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