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Fabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films

Title
Fabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films
Authors
LEE, SKKIM, HGCHUNG, WJKANG, BKKIM, O강봉구
Date Issued
Jan-1996
Publisher
JAPAN J APPLIED PHYSICS
Abstract
P-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.82Ge0.18) films for the first time. The transistors with a channel length of 1.5 mu m exhibit good electrical characteristics. The device performance is degraded in proportion to oxygen content, based on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short-channel devices, resulting in relatively low leakage current (similar to 12.1pA/mu m) and high field-effect hole mobility (similar to 13.4cm(2)/V . s).
Keywords
polycrystalline silicon germanium; TFT; ECR plasma hydrogenation; RTCVD; TEMPERATURE
URI
http://oasis.postech.ac.kr/handle/2014.oak/21605
ISSN
0021-4922
Article Type
PROCEEDINGS PAPER
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