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Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

Title
Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs
Authors
Kwak, JSLee, JLBaik, HKShin, DWPark, CGKim, H
POSTECH Authors
Lee, JLPark, CG
Date Issued
Jan-1996
Publisher
JAPAN J APPLIED PHYSICS
Abstract
Penetration depth of Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300 degrees C, but penetrate deeper than 1000 Angstrom into GaAs at 380 degrees C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380 degrees C results in the lowest contact resistance of 0.43 Ohm mm due to direct contact of ohmic metals with the buried high-doped GaAs layer.
Keywords
high-low-doped GaAs; ohmic contact; penetration depth; Pd; RESISTIVITY; POWER; GE
URI
http://oasis.postech.ac.kr/handle/2014.oak/21528
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 35, no. 7, page. 3841 - 3844, 1996-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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