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Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD

Title
Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD
Authors
Lee, JSAhn, KHJeong, YHKim, DM
POSTECH Authors
Jeong, YH
Date Issued
Dec-1996
Publisher
ELSEVIER SCIENCE SA LAUSANNE
Keywords
quantum-well Hall devices; Si-delta-doping; low-pressure metal organic chemical vapour deposition (LP-MOCVD); HETEROSTRUCTURES; SENSORS; DC
URI
http://oasis.postech.ac.kr/handle/2014.oak/21405
ISSN
0924-4247
Article Type
Article
Citation
SENSORS AND ACTUATORS A-PHYSICAL, vol. 57, no. 3, page. 183 - 185, 1996-12
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 JEONG, YOON HA
Dept of Electrical Enginrg
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