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PROCEEDINGS PAPER
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dc.contributor.authorLEE, SK-
dc.contributor.authorCHOE, SM-
dc.contributor.authorAHN, CG-
dc.contributor.authorCHUNG, WJ-
dc.contributor.authorKWON, YK-
dc.contributor.authorKANG, BK-
dc.contributor.authorKIM, O-
dc.contributor.author강봉구-
dc.date.accessioned2016-03-31T14:12:54Z-
dc.date.available2016-03-31T14:12:54Z-
dc.date.issued1997-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.identifier.citationv.36-
dc.identifier.citationno.3B-
dc.identifier.citationpp.1389-1393-
dc.identifier.issn0021-4922-
dc.identifier.other1997-OAK-0000009724-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/21349-
dc.description.abstractN-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.88Ge0.12) films by a low temperature (less than or equal to 550 degrees C) process. These devices employ in-situ n(+) doped poly-Si0.65Ge0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si1-xGex films against oxygen. The I-d-V-g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing Ge behaviors in poly-Si1-xGex films.-
dc.description.statementofresponsibilityX-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectpolycrystalline silicon germanium-
dc.subjectTFT-
dc.subjectlow temperature-
dc.subjectCMOS TFT-
dc.subjectRTCVD-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectTRANSISTORS-
dc.subjectALLOYS-
dc.titleLow temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films-
dc.typePROCEEDINGS PAPER-
dc.contributor.college전자전기공학과-
dc.author.googleLEE, SK-
dc.author.googleCHOE, SM-
dc.author.googleAHN, CG-
dc.author.googleCHUNG, WJ-
dc.author.googleKWON, YK-
dc.author.googleKANG, BK-
dc.author.googleKIM, O-
dc.relation.volume36-
dc.relation.issue3B-
dc.relation.startpage1389-
dc.relation.lastpage1393-
dc.contributor.id10071834-
dc.publisher.locationJA-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-

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