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Low temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films

Title
Low temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films
Authors
LEE, SKCHOE, SMAHN, CGCHUNG, WJKWON, YKKANG, BKKIM, O강봉구
Date Issued
Jan-1997
Publisher
JAPAN J APPLIED PHYSICS
Abstract
N-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.88Ge0.12) films by a low temperature (less than or equal to 550 degrees C) process. These devices employ in-situ n(+) doped poly-Si0.65Ge0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si1-xGex films against oxygen. The I-d-V-g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing Ge behaviors in poly-Si1-xGex films.
Keywords
polycrystalline silicon germanium; TFT; low temperature; CMOS TFT; RTCVD; OPTICAL-PROPERTIES; TRANSISTORS; ALLOYS
URI
http://oasis.postech.ac.kr/handle/2014.oak/21349
ISSN
0021-4922
Article Type
PROCEEDINGS PAPER
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