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Characterization of proximity correction in 100-nm-regime X-ray lithography

Title
Characterization of proximity correction in 100-nm-regime X-ray lithography
Authors
Yi, MSeo, ESeo, YLee, KKim, O
POSTECH Authors
Kim, O
Date Issued
Jan-1998
Publisher
JAPAN J APPLIED PHYSICS
Keywords
X-ray lithography; image shortening; proximity correction; aerial image simulation; serif; IMAGE
URI
http://oasis.postech.ac.kr/handle/2014.oak/20492
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 12B, page. 6824 - 6829, 1998-01
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 KIM, OHYUN
Dept of Electrical Enginrg
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