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Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)

Title
Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)
Authors
Park, WIAn, SJYi, GCJang, HM
POSTECH Authors
Yi, GCJang, HM
Date Issued
Jan-2001
Publisher
MATERIALS RESEARCH SOCIETY
Abstract
High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 degreesC exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.
Keywords
THIN-FILMS; DEPOSITION; TEMPERATURE; SAPPHIRE; GAN
URI
http://oasis.postech.ac.kr/handle/2014.oak/19554
ISSN
0884-2914
Article Type
Article
Citation
JOURNAL OF MATERIALS RESEARCH, vol. 16, no. 5, page. 1358 - 1362, 2001-01
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 JANG, HYUN MYUNG
Div of Advanced Materials Science
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