Atomic layer deposition of ZrO2 films for high-κ gate and capacitor dielectrics using tris(dimethylamino) cyclopentadienyl zirconium precursor
- Atomic layer deposition of ZrO2 films for high-κ gate and capacitor dielectrics using tris(dimethylamino) cyclopentadienyl zirconium precursor
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- We investigate the deposition of ZrO2 by atomic layer deposition (ALD) process using tris(dimethylamino) cyclopentadientyl zirconium (Cp-Zr) as a precursor and the effect of deposition temperature on the structural and electrical properties of ZrO2 thin films are studied. Since the ALD process window of Cp-Zr is found at 300–350 ˚C, films deposited in this temperature range are compared. No noticeable change in the film composition occurs within the ALD process window and the films are all stoichiometric except for the films deposited at 225 ˚C. However, the crystallinity of the film is significantly affected by the deposition temperature. At 300 ˚C, only the cubic and tetragonal phases are detected, while the monoclinic peak starts to appear at 325 ˚C. Consequently, the highest dielectric constant (35.8) is observed for the ZrO2 films deposited at 300 ˚C. In contrast, ZrO2 films deposited at 350 ˚C show the lowest leakage current. This trend is due to the lower carbon impurity contents along with the increase in deposition temperature. To study the electrical properties of ZrO2 films in more detail, capacitance-voltage (C-V) hysteresis measurements are carried out
the hysteresis is reduced abruptly with an increase in deposition temperature
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