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Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

Title
Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates
Authors
Chon, UJang, HMLee, SHYi, GC
POSTECH Authors
Jang, HMYi, GC
Date Issued
Jan-2001
Publisher
MATERIALS RESEARCH SOCIETY
Abstract
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26-28 muC/cm(2) and the coercive field of 50-75 KV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.
Keywords
BISMUTH TITANATE FILMS; CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; FERROELECTRIC CAPACITORS; BI4TI3O12; SILICON; GROWTH; ABLATION; MEMORIES
URI
http://oasis.postech.ac.kr/handle/2014.oak/19316
ISSN
0884-2914
Article Type
Article
Citation
JOURNAL OF MATERIALS RESEARCH, vol. 16, no. 11, page. 3124 - 3132, 2001-01
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 JANG, HYUN MYUNG
Div of Advanced Materials Science
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