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Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

Title
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
Authors
Jeon, CMJang, HWChoi, KJBae, SBLee, JHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2002
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
MICROSTRUCTURE; BEHAVIOR; GALLIUM; HFETS
URI
http://oasis.postech.ac.kr/handle/2014.oak/19083
ISSN
0038-1101
Article Type
Article
Citation
SOLID-STATE ELECTRONICS, vol. 46, no. 5, page. 695 - 698, 2002-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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