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Cited 10 time in webofscience Cited 14 time in scopus
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High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Title
High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz
Authors
Youn, RHKumar, VLee, JHSchwindt, RChang, WJHong, JYJeon, CMBae, SBPark, MRLee, KSLee, JLLee, JHAdesida, I
POSTECH Authors
Lee, JL
Date Issued
Jan-2003
Publisher
IEE-INST ELEC ENG
Keywords
ALGAN/GAN HEMTS; MICROWAVE; PERFORMANCE; GAN
URI
http://oasis.postech.ac.kr/handle/2014.oak/18601
DOI
10.1049/EL:20030339
ISSN
0013-5194
Article Type
Article
Citation
ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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