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Effects of plasma chamber pressure on the etching of micro structures in SiO2 with the charging effects

Title
Effects of plasma chamber pressure on the etching of micro structures in SiO2 with the charging effects
Authors
Park, HSKim, SJWu, YQLee, JK
Date Issued
Jan-2003
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Keywords
capacitively coupled plasma; charge-up simulation; plasma process induced damage; HIGH-DENSITY PLASMAS; PARTICLE SIMULATIONS; ASPECT RATIO; DISCHARGES; FREQUENCY
URI
http://oasis.postech.ac.kr/handle/2014.oak/18388
DOI
10.1109/TPS.2003.815
ISSN
0093-3813
Article Type
Article
Citation
IEEE TRANSACTIONS ON PLASMA SCIENCE, vol. 31, no. 4, page. 703 - 710, 2003-01
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