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Lead-free layered perovskite film capacitor for ferroelectric random access memory

Title
Lead-free layered perovskite film capacitor for ferroelectric random access memory
Authors
Chon, UShim, JSJang, HM
POSTECH Authors
Jang, HM
Date Issued
Jan-2003
Publisher
TRANS TECH PUBLICATIONS LTD
Keywords
lead-free; samarium; layered perovskite film; FRAM; ferroelectric capacitor; BI3.25LA0.75TI3O12 THIN-FILMS; BISMUTH TITANATE; ELECTRICAL-PROPERTIES; FATIGUE; PT/TI/SIO2/SI(100); HETEROSTRUCTURES; RETENTION
URI
http://oasis.postech.ac.kr/handle/2014.oak/18185
ISSN
0255-5476
Article Type
Article
Citation
MATERIALS SCIENCE FORUM, vol. 439, page. 1 - 6, 2003-01
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 JANG, HYUN MYUNG
Div of Advanced Materials Science
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