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Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN

Title
Electroluminescence in n-ZnO nanorod arrays vertically grown on p-GaN
Authors
Park, WIYi, GC
POSTECH Authors
Yi, GC
Date Issued
Jan-2004
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Electrolurninescent (EL) devices (see Figure) have been fabricated using n-ZnO nanorod arrays grown on p-GaN epilayers. Simple heteroepitaxial growth yields vertically aligned ZnO nanorods with an abrupt interface on GaN. The p-n heterojunction EL device shows a high current density and strong electroluminescence even at a reverse-bias voltage of 3 V.
Keywords
OPTOELECTRONIC DEVICES; ROOM-TEMPERATURE; BAND; PHOTOLUMINESCENCE; EMISSIONS
URI
http://oasis.postech.ac.kr/handle/2014.oak/18105
DOI
10.1002/ADMA.2003057
ISSN
0935-9648
Article Type
Article
Citation
ADVANCED MATERIALS, vol. 16, no. 1, page. 87, 2004-01
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 YI, GYU CHUL
Dept of Materials Science & Enginrg
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