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The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channels

Title
The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channels
Authors
Jeon, CMLee, JHLee, JHLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2004
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGI
Keywords
AlGaN; GaN; heterostructure field-effect transistors (HFETs); isoelectronic doping; PLASMA-ASSISTED MBE; DENSITY; HEMTS; GAN
URI
http://oasis.postech.ac.kr/handle/2014.oak/18049
DOI
10.1109/LED.2004.824
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 3, page. 120 - 122, 2004-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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