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Cited 65 time in webofscience Cited 68 time in scopus
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Background charge fluctuation in a GaAs quantum dot device

Title
Background charge fluctuation in a GaAs quantum dot device
Authors
Jung, SWFujisawa, THirayama, YJeong, YH
Date Issued
Jan-2004
Publisher
AMER INST PHYSICS
Abstract
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot. (C) 2004 American Institute of Physics.
URI
http://oasis.postech.ac.kr/handle/2014.oak/17783
DOI
10.1063/1.1777802
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 85, no. 5, page. 768 - 770, 2004-01
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