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Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics

Title
Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics
Authors
Sohn, CWSagong, HCJeong, EYChoi, DYPark, MSLee, JSKang, CYJammy, RJeong, YH
POSTECH Authors
Lee, JS
Date Issued
Apr-2011
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
In this letter, we analyze the nonsaturating upturns of capacitance under strong accumulation bias in MOS capacitors with high-k dielectrics. By comparing the electrical properties of dielectric samples with and without HfO(2) and by varying the ambient temperature, it is found that the conduction through the shallow trap levels in the HfO(2) bulk produces not only a steady-state current but also a dynamic current, which, in turn, causes the upturn in capacitance. The addition of RC shunts to the conventional small-signal model is proposed to consider the dynamic leakage effect. The model's effectiveness is verified by fitting the measured impedance spectrum and the measured capacitance. We suggest that measuring at a high frequency of hundreds of megahertz eliminates the dynamic interaction by shallow trap levels, allowing gate capacitance to be successfully reconstructed.
Keywords
Capacitance measurement; dynamic response; equivalent circuits; hafnium oxide; high-k dielectrics; radio-frequency measurement; shallow trap level; upturns; EXTRACTION; HF
URI
http://oasis.postech.ac.kr/handle/2014.oak/17493
DOI
10.1109/LED.2011.2108257
ISSN
0741-3106
Article Type
Article
Citation
IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 4, page. 434 - 436, 2011-04
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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