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Control of the pi plasmon in a single layer graphene by charge doping

Title
Control of the pi plasmon in a single layer graphene by charge doping
Authors
Shin, SYKim, NDKim, JGKim, KSNoh, DYKim, KSChung, JW
POSTECH Authors
Chung, JW
Date Issued
Aug-2011
Publisher
AMER INST PHYSICS
Abstract
We report that the behavior of a low-energy pi plasmon excitation in a single layer graphene (SLG) can be modified by doping external potassium (K) atoms, a feature demanded to realize the graphene plasmonics. Using high-resolution electron-energy-loss spectroscopy, we find that upon K-doping the pi plasmon energy increases by 1.1 eV due to the K-induced electron density up to n=7 x 10(13) cm(-2) in SLG. The four modified dispersions for different K-dopings, however, are found to merge into a single universal curve when plotted in the dimensionless coordinates indicating that the unique plasmonic character of SLG is preserved despite the K-dopings. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630230]
URI
http://oasis.postech.ac.kr/handle/2014.oak/17120
DOI
10.1063/1.3630230
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 99, no. 8, 2011-08
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 CHUNG, JIN WOOK
Dept of Physics
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