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Cited 42 time in webofscience Cited 43 time in scopus
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Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics

Title
Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics
Authors
Kim, SRim, TKim, KLee, UBaek, ELee, HBaek, CKMeyyappan, MDeen, MJLee, JS
POSTECH Authors
Baek, CKLee, JS
Date Issued
Jan-2011
Publisher
Royal society of chemistry
Abstract
We have fabricated Si nanowire (SiNW) based ion-sensitive field effect transistors (ISFETs) for biosensing applications. The ability to prepare a large number of sensors on a wafer, the use of standard silicon microfabrication techniques resulting in cost savings, and potential high sensitivity are significant advantages in favor of nanoscale SiNW ISFETs. The SiNW ISFETs with embedded Ag/AgCl reference electrode were fabricated on a standard silicon-on-insulator wafer using electron-beam lithography and conventional semiconductor processing technology. The current-voltage characteristics show an n-type FET behavior with a relatively high on/off current ratio, reasonable subthreshold swing value, and low gate-leakage current. The pH responses of the ISFETs with different pH solutions were characterized at room temperature which showed a clear lateral shift of the drain current vs. gate voltage curve with a change in the pH value of the solution and a sensitivity of 40 mV pH(-1). The low frequency noise characteristics were investigated to evaluate the signal to noise ratio and sensing limit of the devices.
URI
http://oasis.postech.ac.kr/handle/2014.oak/17049
DOI
10.1039/C1AN15568G
ISSN
0003-2654
Article Type
Article
Citation
ANALYST, vol. 136, no. 23, page. 5012 - 5016, 2011-01
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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