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Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Title
Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Authors
Kim, DLee, SKim, COh, TKang, B
POSTECH Authors
Kang, B
Date Issued
Feb-2012
Publisher
The Japan Society of Applied Physics
Keywords
DIELECTRIC STACKS; ISSUES; HFSION; MODEL; HFO2
URI
http://oasis.postech.ac.kr/handle/2014.oak/16013
DOI
10.1143/JJAP.51.02BC10
ISSN
0021-4922
Article Type
Article
Citation
Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02
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 KANG, BONG KOO
Dept of Electrical Enginrg
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