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Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs

Title
Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs
Authors
Lee, SKim, DKim, CLee, NHKim, GJLee, CPark, JKang, B
POSTECH Authors
Kang, B
Date Issued
Sep-2012
Publisher
EISEVIER SCIENCE BV
Keywords
CHANNEL MOSFETS; DEGRADATION; GENERATION; MECHANISM; MODEL
URI
http://oasis.postech.ac.kr/handle/2014.oak/16007
DOI
10.1016/J.MICROREL.2012.06.138
ISSN
0026-2714
Article Type
Article
Citation
Microelectronics Reliability, vol. 52, no. 9, page. 1905 - 1908, 2012-09
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 KANG, BONG KOO
Dept of Electrical Enginrg
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