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Cited 24 time in webofscience Cited 30 time in scopus
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dc.contributor.authorKim, Sko
dc.contributor.authorLee, Dko
dc.contributor.authorPark, Jko
dc.contributor.authorJung, Sko
dc.contributor.authorLee, Wko
dc.contributor.authorShin, Jko
dc.contributor.authorWoo, Jko
dc.contributor.authorChoi, Gko
dc.contributor.authorHwang, Hko
dc.date.available2016-03-31T08:40:40Z-
dc.date.created2013-03-08-
dc.date.issued2012-08-
dc.identifier.citationNANOTECHNOLOGY, v.23, no.32-
dc.identifier.issn0957-4484-
dc.identifier.other2012-OAK-0000027047-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/15803-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherInstitute of Physics Publishing.-
dc.subjectFILMS-
dc.subjectCONDUCTIVITY-
dc.subjectTEMPERATURE-
dc.subjectATMOSPHERE-
dc.subjectRRAM-
dc.subjectH2O-
dc.titleDefect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1088/0957-4484/23/32/325702-
dc.author.googleKim S., Lee D., Park J., Jung S., Lee W., Shin J., Woo J., Choi G., Hwang H.-
dc.relation.volume23-
dc.relation.issue32-
dc.contributor.id10079928-
dc.publisher.locationUK-
dc.relation.journalNANOTECHNOLOGY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorKim, S-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorPark, J-
dc.contributor.nonIdAuthorJung, S-
dc.contributor.nonIdAuthorLee, W-
dc.contributor.nonIdAuthorShin, J-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorChoi, G-
dc.identifier.wosid000306738100016-
dc.date.tcdate2019-01-01-
dc.citation.number32-
dc.citation.titleNANOTECHNOLOGY-
dc.citation.volume23-
dc.identifier.scopusid2-s2.0-84864411409-
dc.description.journalClass1-
dc.description.wostc20-
dc.description.scptc20*
dc.date.scptcdate2018-05-121*

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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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