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Cited 24 time in webofscience Cited 30 time in scopus
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Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

Title
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
Authors
Kim, SLee, DPark, JJung, SLee, WShin, JWoo, JChoi, GHwang, H
POSTECH Authors
Hwang, H
Date Issued
Aug-2012
Publisher
Institute of Physics Publishing.
Keywords
FILMS; CONDUCTIVITY; TEMPERATURE; ATMOSPHERE; RRAM; H2O
URI
http://oasis.postech.ac.kr/handle/2014.oak/15803
DOI
10.1088/0957-4484/23/32/325702
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 23, no. 32, 2012-08
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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